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FM330

Formosa MS

Silicon epitaxial planer type

Chip Schottky Barrier Diodes FM320 THRU FM3100 Silicon epitaxial planer type Formosa MS SMC 0.276(7.0) 0.260(6.6) 0.01...


Formosa MS

FM330

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Description
Chip Schottky Barrier Diodes FM320 THRU FM3100 Silicon epitaxial planer type Formosa MS SMC 0.276(7.0) 0.260(6.6) 0.012(0.3) Typ. Features Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current. 0.032(0.8) Typ. 0.040(1.0) Typ. 0.152(3.8) 0.144(3.6) 0.189(4.8) 0.173(4.4) 0.244(6.2) 0.228(5.8) 0.087(2.2) 0.071(1.8) 0.040 (1.0) Typ. Mechanical data Case : Molded plastic, JEDE C DO-214AB Terminals : Solder plated, s olderable per MIL-STD-750, Method 2026 Polarity : Indicated by cathode band Mounting P osition : Any Weight : 0.00585 ounce, 0.195 gr am Dimensions in inches and (millimeters) MAXIMUM RATINGS (AT TA=25oC unless otherwise noted) PARAMETER Forward rectified current Forward surge current See Fig.1 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TA = 25o C CONDITIONS Symbol IO IFSM MIN. TYP. MAX. 3.0 80 0.5 20 Rq JA CJ TSTG -55 55 250 +150 o UNIT A A mA mA C / w pF o Reverse current Thermal resistance Diode junction capacitance Storage temperature VR = VRRM TA = 125o C Junction to ambient f=1MHz and applied 4vDC reverse voltage IR C SYMBOLS MARKING CODE SS32 SS33 SS34 SS35 SS36 SS38 S310 V RRM 20 30 40 50 60 80 *1 V RMS 14 21 28 35 42 56 70 *2 VR *3 VF *4 Operating temperature (o C) (V) FM320 FM330 FM340 FM350 FM360 FM380 FM3100 (V) (V...




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