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FM25CL64

ETC

64Kb FRAM Serial 3V Memory

FM25CL64 64Kb FRAM Serial 3V Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • Unlim...


ETC

FM25CL64

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FM25CL64 64Kb FRAM Serial 3V Memory Features 64K bit Ferroelectric Nonvolatile RAM Organized as 8,192 x 8 bits Unlimited Read/Write Cycles 45 Year Data Retention NoDelay™ Writes Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI Up to 20 MHz Frequency Direct Hardware Replacement for EEPROM SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) Description The FM25CL64 is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 45 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. Unlike serial EEPROMs, the FM25CL64 performs write operations at bus speed. No write delays are incurred. The next bus cycle may commence immediately without the need for data polling. The next bus cycle may start immediately. In addition, the product offers virtually unlimited write endurance, orders of magnitude more endurance than EEPROM. Also, FRAM exhibits much lower power during writes than EEPROM since write operations do not require an internally elevated power supply voltage for write circuits. These capabilities make the FM25CL64 ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critical, to demanding i...




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