MOS FET
MOS FET FKV460FP (under development)
Absolute Maximum Ratings (Ta=25ºC)
Symbol VDSS VGSS ID ID (pulse)* PD Tch Tstg * P...
Description
MOS FET FKV460FP (under development)
Absolute Maximum Ratings (Ta=25ºC)
Symbol VDSS VGSS ID ID (pulse)* PD Tch Tstg * PW Ratings 40 ± 20 ± 60 ± 180 Unit V V A A W ºC ºC
Electrical Characteristics
Symbol V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD Test Conditions ID = 100µA, VGS = 0V VGS = +20V VGS = –20V VDS = 40V, VGS = 0V VDS = 10V, ID = 250µA VDS = 10V, ID = 25A VGS = 10V, ID = 25A VDS = 10V f = 1.0MHz VGS = 0V ID = 25A VDD 12V RL = 0.48Ω VGS = 10V ISD = 50A, VGS = 0V min 40 +10 –5 100 2.3 6 2000 1200 200 To be defined 1.0 1.5 8 Ratings typ max
(Ta=25ºC) Unit V
External Dimensions FM100 (full-mold)
0.8 5.5 ±0.2 3.6 ±0.1 15.6 ±0.2 5.5 ±0.2 3.45 ±0.2
(16.2)
70 (Tc=25ºC) 150 –55 to +150 100µs, duty 1%
1.3 20.0
µA V S mΩ pF pF pF ns ns ns ns V
23.0 ±0.3 9.5±0.2
µA
3.3
1.75 ±0.15 2.15 ±0.15
+0.2 1.05 –0.1 +0.2
1.6
a b
5.45 ±0.1 1.5 4.4
5.45 ±0.1 1.5
0.65 –0.1
3.35 ±0.2
G
D
S
a) Type No. b) Lot No. (Unit: mm)
3.0
0.8
73
...
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