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FK25SM-5

Mitsubishi Electric Semiconductor

Power MOSFET

MITSUBISHI Nch POWER MOSFET FK25SM-5 HIGH-SPEED SWITCHING USE FK25SM-5 OUTLINE DRAWING 15.9MAX. Dimensions in mm 4.5...


Mitsubishi Electric Semiconductor

FK25SM-5

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Description
MITSUBISHI Nch POWER MOSFET FK25SM-5 HIGH-SPEED SWITCHING USE FK25SM-5 OUTLINE DRAWING 15.9MAX. Dimensions in mm 4.5 1.5 r 2 2 4 20.0 φ 3.2 5.0 1.0 q 5.45 w e 5.45 19.5MIN. 4.4 0.6 2.8 4 wr q GATE w DRAIN e SOURCE r DRAIN e ¡VDSS ................................................................................ 250V ¡rDS (ON) (MAX) .............................................................. 0.16Ω ¡ID ......................................................................................... 25A ¡Integrated Fast Recovery Diode (MAX.) ........150ns q TO-3P APPLICATION Servo motor drive, Robot, UPS, Inverter Fluorecent lamp, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IS ISM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 250 ±30 25 75 25 75 250 –55 ~ +150 –55 ~ +150 4.8 Unit V V A A A A W °C °C g Feb.1999 MITSUBISHI Nch POWER MOSFET FK25SM-5 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter (Tch = 25°C) Test conditions ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 250V, VGS = 0V ID = 1mA, VDS = 10V ID = 12A, VGS = 10V ID = 12A, VGS = 10V ID = 12A, VDS = 10V VDS =...




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