Document
MITSUBISHI Nch POWER MOSFET
FK16KM-5
HIGH-SPEED SWITCHING USE
FK16KM-5
OUTLINE DRAWING
10 ± 0.3
6.5 ± 0.3 3 ± 0.3
Dimensions in mm
2.8 ± 0.2
15 ± 0.3
φ 3.2 ± 0.2
14 ± 0.5
3.6 ± 0.3
1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15
0.75 ± 0.15
2.54 ± 0.25
2.54 ± 0.25
4.5 ± 0.2
1 2 3
2.6 ± 0.2
w
¡VDSS ................................................................................ 250V ¡rDS (ON) (MAX) .............................................................. 0.31Ω ¡ID ......................................................................................... 16A ¡Viso ................................................................................ 2000V ¡Integrated Fast Recovery Diode (MAX.) ........150ns
q
q GATE w DRAIN e SOURCE
e
TO-220FN
APPLICATION Servo motor drive, Robot, UPS, Inverter Fluorecent lamp, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IS ISM PD Tch Tstg Viso —
(Tc = 25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight VGS = 0V VDS = 0V
Conditions
Ratings 250 ±30 16 48 16 48 35 –55 ~ +150 –55 ~ +150 2000 2.0
Unit V V A A A A W °C °C Vrms g
Feb.1999
AC for 1minute, Terminal to case Typical value
MITSUBISHI Nch POWER MOSFET
FK16KM-5
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter
(Tch = 25°C)
Test conditions ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 250V, VGS = 0V ID = 1mA, VDS = 10V ID = 8A, VGS = 10V ID = 8A, VGS = 10V ID = 8A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min. 250 ±30 — — 2 — — 6.5 — — — — — — — — — — Typ. — — — — 3 0.24 1.92 10.0 1050 220 45 20 40 110 50 1.5 — — Max. — — ±10 1 4 0.31 2.48 — — — — — — — — 2.0 3.57 150
Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W ns
Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
VDD = 150V, ID = 8A, VGS = 10V, RGEN = RGS = 50Ω
IS = 8A, VGS = 0V Channel to case IS = 16A, dis/dt = –100A/µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 50
POWER DISSIPATION PD (W) DRAIN CURRENT ID (A)
MAXIMUM SAFE OPERATING AREA 7 5 3 2 101 7 5 3 2 100 7 5 3 2 tw=10µs 100µs
40
30
1ms 10ms
20
10
0
0
50
100
150
200
DC 10–1 7 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
TC = 25°C Single Pulse
CASE TEMPERATURE TC (°C)
MITSUBISHI Nch POWER MOSFET
FK16KM-5
HIGH-SPEED SWITCHING USE
OUTPUT CHARACTERISTICS (TYPICAL) 50.