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FK16KM-5 Dataheets PDF



Part Number FK16KM-5
Manufacturers Mitsubishi Electric Semiconductor
Logo Mitsubishi Electric Semiconductor
Description HIGH-SPEED SWITCHING USE
Datasheet FK16KM-5 DatasheetFK16KM-5 Datasheet (PDF)

MITSUBISHI Nch POWER MOSFET FK16KM-5 HIGH-SPEED SWITCHING USE FK16KM-5 OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3 3 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 φ 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 4.5 ± 0.2 1 2 3 2.6 ± 0.2 w ¡VDSS 250V ¡rDS (ON) (MAX) .. 0.31Ω ¡ID ..

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MITSUBISHI Nch POWER MOSFET FK16KM-5 HIGH-SPEED SWITCHING USE FK16KM-5 OUTLINE DRAWING 10 ± 0.3 6.5 ± 0.3 3 ± 0.3 Dimensions in mm 2.8 ± 0.2 15 ± 0.3 φ 3.2 ± 0.2 14 ± 0.5 3.6 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 4.5 ± 0.2 1 2 3 2.6 ± 0.2 w ¡VDSS ................................................................................ 250V ¡rDS (ON) (MAX) .............................................................. 0.31Ω ¡ID ......................................................................................... 16A ¡Viso ................................................................................ 2000V ¡Integrated Fast Recovery Diode (MAX.) ........150ns q q GATE w DRAIN e SOURCE e TO-220FN APPLICATION Servo motor drive, Robot, UPS, Inverter Fluorecent lamp, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IS ISM PD Tch Tstg Viso — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Weight VGS = 0V VDS = 0V Conditions Ratings 250 ±30 16 48 16 48 35 –55 ~ +150 –55 ~ +150 2000 2.0 Unit V V A A A A W °C °C Vrms g Feb.1999 AC for 1minute, Terminal to case Typical value MITSUBISHI Nch POWER MOSFET FK16KM-5 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter (Tch = 25°C) Test conditions ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 250V, VGS = 0V ID = 1mA, VDS = 10V ID = 8A, VGS = 10V ID = 8A, VGS = 10V ID = 8A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 250 ±30 — — 2 — — 6.5 — — — — — — — — — — Typ. — — — — 3 0.24 1.92 10.0 1050 220 45 20 40 110 50 1.5 — — Max. — — ±10 1 4 0.31 2.48 — — — — — — — — 2.0 3.57 150 Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W ns Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = 150V, ID = 8A, VGS = 10V, RGEN = RGS = 50Ω IS = 8A, VGS = 0V Channel to case IS = 16A, dis/dt = –100A/µs PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA 7 5 3 2 101 7 5 3 2 100 7 5 3 2 tw=10µs 100µs 40 30 1ms 10ms 20 10 0 0 50 100 150 200 DC 10–1 7 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 TC = 25°C Single Pulse CASE TEMPERATURE TC (°C) MITSUBISHI Nch POWER MOSFET FK16KM-5 HIGH-SPEED SWITCHING USE OUTPUT CHARACTERISTICS (TYPICAL) 50.


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