FJX3906

FJX3906 FJX3906 General Purpose Transistor 3 2 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCES VEBO IC PC TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature SOT-323 1. Base 2. Emitter 3. Collector 1 Value -40 -40 -5 -200 350 -55 ~ 150 Units V V V mA mW °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICEX hFE Parameter Collector-Base Breakdown Voltage * Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current * DC Current Gain Test Condition IC= -10µA, IE=0 IC= -1.0mA, IB=0 IE=10µA, IC=0 VCE= -30V, VEB= -3V VCE= -1V, IC= -0.1mA VCE= -1V, IC= -1mA VCE= -1V, IC= -10mA VCE= -1V, IC= -50mA VCE= -1V, IC= -100mA IC= -10mA, IB= -1mA IC= -50mA, IB= -5mA IC= -10mA, IB= -1mA IC= -50mA, IB= -5mA IC= -10mA, VCE= -20V VCB= -5V, IE=0 f=1.0MHz IC= -10µA, VCE= -5V RS=1KΩ f=10Hz to 15.7KHz VCC= -3V, VBE= -0.5V IC= -10mA, IB1= -1mA VCC= -3V, IC= -10mA IB1=IB2=1mA Min. -40 -40 -5 Max. Units V V V -50 60 80 100 60 30 nA 300 VCE (sat) VBE (sat) fT Cob NF * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure -0.25 -0.4 -0.65 250 4.5 4 -0.85 -0.95 V V V V MHz pF dB tON tOFF Turn On Time Turn Off Time 70 300 ns ns * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% Marking ...