FJV4112R
FJV4112R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driv...
FJV4112R
FJV4112R
Switching Application (Bias Resistor Built In)
Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=47KΩ) Complement to FJV3112R
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector
Equivalent Circuit C
Marking
R B
R8 2
PNP Epitaxial Silicon
Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature
E
Value -40 -40 -5 -100 200 150 -55 ~ 150
Units V V V mA mW °C °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCBO BVCEO ICBO hFE VCE (sat) Cob fT R Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Input Resistor Test Condition IC= -100µA, IE=0 IC= -1mA, IB=0 VCB= -30V, IE=0 VCE= -5V, IC= -1mA IC= -10mA, IB= -1mA VCB= -10V, IE=0 f=1MHz VCE= -10V, IC= -5mA 32 5.5 200 47 62 100 Min. -40 -40 -0.1 600 -0.3 V pF MHz KΩ Typ. Max. Units V V µA
©2002 Fairchild Semiconductor Corporation
Rev. A, August 2002
FJV4112R
Package Dimensions
SOT-23
0.20 MIN 2.40
±0.10
0.40 ±0.03
1.30
±0.10
0.45~0.60
0.03~0.10 0.38 REF
0.40 ±0.03 0.96~1.14 2.90 ±0.10
0.12 –0.023
+0.05
0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF
0.97REF
Dimensions in Millim...