FJV1845

FJV1845 FJV1845 Amplifier Transistor Complement to FJV992 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Junction Temperature Storage Temperature Value 120 120 5 50 10 300 150 -55 ~ 150 Units V V V mA mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol ICBO IEBO hFE1 hFE2 VBE (on) VCE (sat) fT Cob Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base-Emitter On Voltage Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Test Condition VCB=120V, IE=0 VEB=5V, IC=0 VCE=6V, IC=0.1mA VCE=6V, IC=1mA VCE=6V, IC=1mA IC=10mA, IB=1mA VCE=6V, IC=1mA VCB=30V, IE=0, f=1MHz 50 150 200 0.55 580 600 0.59 0.07 110 1.6 2.5 Min. Typ. Max. 50 50 1200 0.65 0.3 V V MHz pF Units nA nA hFE2 Classification Classification hFE2 P 200 ~ 400 Marking F 300 ~ 600 E 400 ~ 800 U 600 ~ 1200 6E hFE Classification ©2002 Fairchild Semiconductor Corporation Rev. B1, August 2002 FJV1845 Typical Characteristics 10 IB=16µA IB=14µA 1.0 IB=1.4µA IB=1.2µA IB=1.0µA IB=0.8µA IB=0.6µA IC[mA], COLLECTOR CURRENT 8 IB=12µA IB=10µA IB=8µA 4 6 IC[mA], COLLECTOR CURRENT 0.8 0.6 IB=6µA IB=4µA 0.4 IB=0.4µA 2 IB=2µA 0.2 IB=0.2µA 0 0 1 2 3 4 5 0.0 0 20 40 60...