FJPF5021

FJPF5021 FJPF5021 High Voltage and High Reliability High Speed Switching : tF = 0.1µs(Typ.) Wide SOA 1 TO-220F 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO V CEO VEBO IC ICP IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 800 500 7 5 10 2 40 150 - 55 ~ 150 Units V V V A A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition BVCBO BVCEO BVEBO VCEX (sus) Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector-Emitter Sustaining Voltage IC = 1mA, IE = 0 IC = 5mA, IB = 0 IE = 1mA, IC = 0 IC = 2.5A, IB1 = -IB2 = 1A L = 1mH, Clamped ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) Cob fT tON tSTG tF Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Turn On Time Storage Time Fall Time VCB = 500V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 0.6A VCE = 5V, IC = 3A IC = 3A, IB = 0.6A IC = 3A, IB = 0.6A VCB = 10V, IE = 0, f = 1MHz VCE = 10V, IC = 0.6A VCC = 200V IC = 5IB1 = -2.5IB2 = 4A RL = 50Ω Min. 800 500 7 500 15 8 Typ. 80 15 0.1 Max. Units V V V V 10 µA 10 µA 50 1 V 1.5 ...