FJP5304D

FJP5304D — NPN Silicon Transistor FJP5304D NPN Silicon Transistor High Voltage High Speed Power Switch Application Wide Safe Operating Area Built-in Free Wheeling diodeSuitable for Electronic Ballast Application Suitable for Electronic Ballast Application Small Variance in Storage Time July 2008 Equivalent Circuit C B 1 TO-220 E 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current (DC) ICP * Collector Current (Pulse) IB Base Current (DC) IBP * Base Current (Pulse) PC Collector Dissipation (TC=25°C) TSTG Storage Temperature * Pulse Test Pulse Width = 5ms, Duty Cycle ≥ 1.0% Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition BVCBO BVCEO Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage IC = 1mA, IE = 0 IC = 5mA, IB = 0 BVEBO ICES Emitter-Base Breakdown Voltage Collector Cut-off Current IE = 1mA, IC = 0 VCE = 700V, VEB = 0 ICEO IEBO Collector Cut-off Current Emitter Cut-off Current VCE = 400V, IB = 0 VEB = 12V, IC = 0 Value 700 400 12 4 8 2 4 70 - 65 ~ 150 Units V V V A A A A W °C Min. Typ. Max. Units 700 V 400 V 12 V 100 mA 250 mA 100 mA © 2008 Fairchild Semiconductor Corporation FJP5304D Rev. A 1 www.fairchildsemi.com FJP5304D — NPN Silicon Transistor hFE VCE(sat) DC Current Gain Collector-Emitter Saturation Voltage VB...