FJP5304D — NPN Silicon Transistor
FJP5304D NPN Silicon Transistor
High Voltage High Speed Power Switch Application
• Wi...
FJP5304D —
NPN Silicon
Transistor
FJP5304D
NPN Silicon
Transistor
High Voltage High Speed Power Switch Application
Wide Safe Operating Area Built-in Free Wheeling diodeSuitable for Electronic Ballast Application Suitable for Electronic Ballast Application Small Variance in Storage Time
July 2008
Equivalent Circuit C
B
1 TO-220 E 1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC Collector Current (DC)
ICP * Collector Current (Pulse)
IB Base Current (DC)
IBP * Base Current (Pulse) PC Collector Dissipation (TC=25°C)
TSTG
Storage Temperature
* Pulse Test Pulse Width = 5ms, Duty Cycle ≥ 1.0%
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO BVCEO
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage
IC = 1mA, IE = 0 IC = 5mA, IB = 0
BVEBO ICES
Emitter-Base Breakdown Voltage Collector Cut-off Current
IE = 1mA, IC = 0 VCE = 700V, VEB = 0
ICEO IEBO
Collector Cut-off Current Emitter Cut-off Current
VCE = 400V, IB = 0 VEB = 12V, IC = 0
Value 700 400 12
4 8 2 4 70 - 65 ~ 150
Units V V V A A A A W °C
Min. Typ. Max. Units 700 V 400 V 12 V
100 mA 250 mA 100 mA
© 2008 Fairchild Semiconductor Corporation FJP5304D Rev. A
1
www.fairchildsemi.com
FJP5304D —
NPN Silicon
Transistor
hFE VCE(sat)
DC Current Gain Collector-Emitter Saturation Voltage
VB...