FJNS3207R

FJNS3207R FJNS3207R Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=22KΩ, R2=47KΩ) Complement to FJNS4207R 1 TO-92S 1.Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 50 50 10 100 300 150 -55 ~ 150 Units V V V mA mW °C °C E R2 B Equivalent Circuit C R1 Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO ICBO hFE VCE(sat) Cob fT VI(off) VI(on) R1 R1/R2 Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Output Capacitance Current Gain Bandwidth Product Input Off Voltage Input On Voltage Input Resistor Resistor Ratio Test Condition IC=10µΑ, IE=0 IC=100µA, IB=0 VCB=40V, IE=0 VCE=5V, IC=5mA IC=10mA, IB=0.5mA VCB=10V, IE=0 f=1MHz VCE=10V, IC=5mA VCE=5V, IC=100µA VCE=0.3V, IC=2mA 15 0.42 22 0.47 0.4 2.5 29 0.52 3.7 250 68 0.3 V pF MHz V V KΩ Min. 50 50 0.1 Typ. Max. Units V V µA ©2002 Fairchild Semiconductor Corporation Rev. A, August 2002 FJNS3207R Typical Characteristics 1000 VCE = 5V R1 = 22K R2 = 47K 100 VCE = 0.3V R1 = 22K R2 = 47K VI(on)[V], INPUT VOLTAGE hFE, DC C...