FJN965

FJN965 FJN965 For Output Amplifier of Electronic Flash Unit Low Collector-Emitter Saturation Voltage High Performance at Low Supply Voltage 1 TO-92 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Ratings 40 20 7 5 0.75 150 -55 ~ 150 Units V V V A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO BVEBO ICBO ICEO IEBO hFE1 hFE2 VCE (sat) fT Cob Parameter Collector-Emitter Voltage Emitter Base Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Band Width Product Collector Output Capacitance Test Condition IC=1mA, IB=0 IC=100µA, IC=0 VCB=10V, IE=0 VCE=10V, IB=0 VEB=7V, IC=0 VCE=2V, IC=0.5A VCE=2V, IC=2A IC=3A, IB=0.1A VCE=6V, IC=50mA VCB=20V, IE=0, f=1MHz 150 23 230 150 Min. 20 7 0.1 1 0.1 600 1 V MHz pF Typ. Max. Units V V µA µA µA ©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 FJN965 Typical Characteristics 14 1.8 IB=200mA 12 1.6 VCE=2V IC[mA], COLLECTOR CURRENT 10 IC[A], COLLECTOR CURRENT 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 8 Ta=125 C o 25 C o -40 C o 6 4 IB=20mA 2 0 0 2 4 6 8 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VCE[V], COLLECTOR-EMIT...