FJN5471

FJN5471 FJN5471 For Output Amplifier of Electronic Flash Unit High DC Currrent Gain Low Collector-Emitter Saturation Voltage High Performance at Low Supply Voltage 1 TO-92 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Ratings 40 20 7 5 0.75 150 -55 ~ 150 Units V V V A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO BVEBO ICBO IEBO hFE VCE (sat) VBE (sat) fT Cob Parameter Collector-Emitter Voltage Emitter Base Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Band Width Product Collector Output Capacitance Test Condition IC=1mA, IB=0 IC=100µA, IC=0 VCB=10V, IE=0 VEB=7V, IC=0 VCE=2V, IC=0.5A IC=3A, IB=0.1A IC=3A, IB=0.1A VCE=6V, IC=50mA VCB=20V, IE=0, f=1MHz 150 25 700 1000 0.5 1.5 V V MHz pF Min. 20 7 0.1 0.1 Typ. Max. Units V V µA µA Thermal Characteristics TC=25°C unless otherwise noted Symbol RθjA Parameter Thermal Resistance, Junction to Ambient Max 165 Units °C/W ©2002 Fairchild Semiconductor Corporation Rev. A1, August 2002 FJN5471 Typical Characteristics 7 8 VCE=2V 6 7 IC[A], COLLECTOR CURRENT 5 IB=12mA IB=10mA IB=8mA IB=6mA IB=4mA 4 3 IC[A], ...