FJE3303

FJE3303 FJE3303 High Voltage Switch Mode Applications High Speed Switching Suitable for Electronic Ballast and Switching Regulator 1 TO-126 2.Collector 3.Base 1. Emitter NPN Silicon Transistor Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB IBP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) *Base Current (Pulse) Collector Power Dissipation(Ta=25°C) Junction Temperature Storage Temperature Value 700 400 9 1.5 3 0.75 1.5 20 150 - 65 ~ 150 Units V V V A A A A W °C °C * Pulse Test: Pulse Width=5ms, Duty Cycle < 10% Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE (sat) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current *DC Current Gain Collector-Emitter Saturation Voltage Test Condition IC=500µA, IE=0 IC=5mA, IB=0 IE=500µA, IC=0 VCB=700V, IE=0 VEB=9V, IC=0 VCE=2V, IC=0.5A VCE=2V, IC=1.0A IC=0.5A, IB=0.1A IC=1.0A, IB=0.25A IC=1.5A, IB=0.5A VBE (sat) fT tON tSTG tF Base-Emitter Saturation Voltage Current Gain Bandwidth Product Turn ON Time Storage Time Fall Time IC=0.5A, IB=0.1A IC=1.0A, IB=0.25A VCE=10V, IC=0.1A VCC=125V, IC=1A, IB1=0.2A, IB2=-0.2A, RL = 125Ω 4 1.1 4.0 0.7 8 5 0.5 1.0 3.0 1.0 1.2 V V V V V MHz µs µs µs Min. 700 400...