FJD3076

FJD3076 FJD3076 Power Amplifier Applications Low Collector-Emitter Saturation Voltage 1 D-PACK 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 40 32 5 2 1 10 150 - 55 ~ 150 Units V V V A W W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO BVCBO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Parameter Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Test Condition IC = 1mA, IB = 0 IC = 50µA IE = 50µA VCB = 20V, IE = 0 VEB = 4V, IC = 0 VCE = 3V, IC= 0.5A IC = 2A, IB = 0.2A VCE = 5V, IE = -0.5A, f = 100MHz VCB = 10V, IE = 0A, f = 1MHz 130 0.5 100 50 Min. 32 40 5 1 1 390 0.8 V MHz pF Typ. Max. Units V V V µA µA ©2001 Fairchild Semiconductor Corporation Rev. C1, December 2001 FJD3076 Typical Characteristics 2.0 1000 IB = 20mA IC[A], COLLECTOR CURRENT 1.6 1.2 IB = 16mA IB = 14mA IB = 12mA IB = 10mA hFE, DC CURRENT GAIN IB = 18mA VCE = 3V 100 0.8 IB = 8mA IB = 6mA VCE = 1V 0.4 IB = 4mA IB = 2mA 0.0 0 10 20 30 10 1E-3 0....