FJC790

FJC790 FJC790 Camera Strobe Flash Application Complement to FJC690 High Collector Current Low Collector-Emitter Saturation Voltage SOT-89 Marking: F79 1 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Power Dissipation Junction Temperature Storage Temperature Value -50 -40 -5 -2 0.5 150 - 55 ~ 150 Units V V V A W °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICEO IEBO hFE Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC = -100µA, IE = 0 IC = -10mA, IB = 0 IE = -100µA, IC = 0 VCE = -35V, VB = 0 VEB = -4V, IC = 0 VCE = -2V, IC = -10mA VCE = -2V, IC = -500mA VCE = -2V, IC = -1mA VCE = -2V, IC = -2mA IC = -0.5A, IB = -5mA IC = -1A, IB = -10mA IC = -2A, IB = -50mA IC = -1A, IB = -10mA VCE = -2V, IC = 1A VCB = -10V, IE = 0, f = 1MHz 20 300 250 200 150 Min. -50 -40 -5 -0.1 -0.1 800 Typ. Max. Units V V V µA µA VCE(sat) Collector-Emitter Saturation Voltage -250 -350 -450 -0.9 -0.8 mV mV mV V V pF VBE(sat) VBE(on) COB Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector Output Capacitance ©2004 Fairchild Semiconductor Corporation Rev. A, April 2004 FJC790 Pack...