FJC1386

FJC1386 FJC1386 Low Saturation Transistor Medium Power Amplifier Complement to FJC2098 High Collector Current Low Collector-Emitter Saturation Voltage 1 SOT-89 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Power Dissipation(TC=25°C) Junction Temperature Storage Temperature Value -30 -20 -6 -5 0.5 150 - 55 ~ 150 Units V V V A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) VBE(sat) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Test Condition IC=-50µA, IE=0 IC=-1mA, IB=0 IE=-50µA, IC=0 VCB=-20V, VB=0 VEB=-5V, IC=0 VCE=-2V, IC=-0.5A IC=-4, IB=-0.1A IC=-4, IB=-0.1A 80 Min. -30 -20 -6 -0.5 -0.5 390 -1.0 -1.5 V V Typ. Max. Units V V V µA µA Thermal Characteristics TC=25°C unless otherwise noted Symbol RθjA Parameter Thermal Resistance, Junction to Ambient Max 250 Units °C/W hFE Classification Classification hFE P 80 ~ 180 Marking Q 120 ~ 270 R 180 ~ 390 FAP hFE grade ©2002 Fairchild Semiconductor Corporation Rev. A1, August 2002 FJC1386 Typical Characteristics -1400 1000 IB = -7mA VCE = -...