FJC1386
FJC1386
Low Saturation Transistor Medium Power Amplifier
• Complement to FJC2098 • High Collector Current • Low...
FJC1386
FJC1386
Low Saturation
Transistor Medium Power Amplifier
Complement to FJC2098 High Collector Current Low Collector-Emitter Saturation Voltage
1
SOT-89
1. Base 2. Collector 3. Emitter
PNP Epitaxial Silicon
Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Power Dissipation(TC=25°C) Junction Temperature Storage Temperature Value -30 -20 -6 -5 0.5 150 - 55 ~ 150 Units V V V A W °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) VBE(sat) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Test Condition IC=-50µA, IE=0 IC=-1mA, IB=0 IE=-50µA, IC=0 VCB=-20V, VB=0 VEB=-5V, IC=0 VCE=-2V, IC=-0.5A IC=-4, IB=-0.1A IC=-4, IB=-0.1A 80 Min. -30 -20 -6 -0.5 -0.5 390 -1.0 -1.5 V V Typ. Max. Units V V V µA µA
Thermal Characteristics TC=25°C unless otherwise noted
Symbol RθjA Parameter Thermal Resistance, Junction to Ambient Max 250 Units °C/W
hFE Classification
Classification hFE P 80 ~ 180
Marking
Q 120 ~ 270
R 180 ~ 390
FAP
hFE grade
©2002 Fairchild Semiconductor Corporation
Rev. A1, August 2002
FJC1386
Typical Characteristics
-1400
1000
IB = -7mA
VCE = -...