FJA4210

FJA4210 — PNP Epitaxial Silicon Transistor FJA4210 PNP Epitaxial Silicon Transistor Audio Power Amplifier High Current Capability : IC= -10A High Power Dissipation Wide S.O.A Complement to FJA4310 October 2008 1 TO-3P 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* Ta = 25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Base Current (DC) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics* Ta=25°C unless otherwise noted Symbol Parameter Test Condition BVCBO Collector-Base Breakdown Voltage BVCEO Collector-Emitter Breakdown Voltage BVEBO Emitter-Base Breakdown Voltage ICBO Collector Cut-off Current IEBO Emitter Cut-off Current hFE * DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage Cob Output Capacitance fT Current Gain Bandwidth Product * Pulse Test: Pulse Width£300ms, Duty Cycle£2% IC=-5mA, IE=0 IC=-50mA, RBE=¥ IE=-5mA, IC=0 VCB=-200V, IE=0 VEB=-6V, IC=0 VCE=-4V, IC=-3A IC=-5A, IB=-0.5A VCB=-10V, f=1MHz VCE=-5V, IC=-1A hFE Classification Classification hFE R 50 ~ 100 O 70 ~ 140 Ratings -200 -140 -6 -10 -1.5 100 150 - 55 ~ 150 Units V V V A A W °C °C Min. -200 -140 -6 50 Typ. 400 30 Max. -10 -10 180 -0.5 Units V V V mA mA V pF MHz ...