FHX35LG

FHX35X/002 FHX35LG/002 Low Noise HEMT DESCRIPTION The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT (High Electron Mobility Transistor) ones suitable for use as the front end of an optical receiver in high speed lightwave communication systems. This HEMT combines high transconductance, low gate capacitance and low leakage current; all important factors in achieving low noise preamplification. Fujitsu’s stringent Quality Assurance criteria and detailed Test Procedures assure Highest Reliabiltity Performance. FEATURES High Transconductance Low Leakage Current Low Gate Capacitance Gold Bonding System Proven Reliability LG PACKAGE ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Thermal Resistance Symbol VDS VGS PT Tstg Tch Rth Channel to Case Conditions Ratings 6 -5 290 -65 to 175 +175 150 Unit V V mW °C °C °C/W ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Drain Current Transconductance Pinch-off Voltage Gate-Source Leakage Current Gate-Source Capacitance Gate-Drain Capacitance Symbol IDSS gm Vp IGSO CGS CGD Conditions VDS=2V, VGS=0V VDS=2V, IDS=10mA VDS=2V, IDS=1mA VGS=-2V VDS=3V IDS=10mA FHX35X/002 FHX35LG/002 Min. 15 45 -0.2 Limits Min. 40 60 -1.0 10 0.27 0.47 0.035 Max. 85 -2.0 20 pF Unit mA mS V nA pF VDS=3V, IDS=10mA Edition 1.1 May 1998 1 FHX35X/002 FHX35LG/002 Low Noise HEMT Fig. 1 Drain Current vs. Drain-Sourc...