Ordering number : EN5874
NPN Epitaxial Planar Silicon Composite Transistor
FH102
High-Frequency Low-Noise Amp, Differe...
Ordering number : EN5874
NPN Epitaxial Planar Silicon Composite
Transistor
FH102
High-Frequency Low-Noise Amp, Differential Amp Applications
Features
Package Dimensions
Composite type with 2
transistors contained in the MCP unit: mm package currently in use, improving the mounting 2149-MCP6 efficiency greatly. The FH102 is formed with two chips, being equivalent to the 2SC5226, placed in one package. Optimal for differential amplification due to excellent 6 thermal equilibrium and pair capability.
1 0.65 2.0
[FH102]
5 4 0 ‘0.1 1.25 2.1 0.2 0.25 0.425 0.15
2
3 0.425
Specifications Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC PT Tj Tstg Conditions Ratings
1 : Collector1 2 : Emitter1 3 : Collector2 4 : Emitter2 5 : Base2 6 : Base1 SANYO : MCP6
0.2 0.9
Mounted on ceramic board (250mm2×0.8mm), 1unit Mounted on ceramic board (250mm2×0.8mm)
20 10 2 70 300 500 150 –55 to +150
Unit V V V mA mW mW °C °C
Electrical Characteristics at Ta=25°C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Ratio Base-to-Emitter Voltage Difference Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Symbol ICBO IEBO hFE hFE(small/large) VBE(small-large) fT Cob Cre Conditions VCB=10V, IE=0 VEB=1V, IC=0 VCE=5V, IC=20mA VCE=5...