FGH50N6S2D

FGH50N6S2D July 2002 FGH50N6S2D 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode General Description The FGH50N6S2D is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of the SMPS IGBTs along with lower gate charge, plateau voltage and avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for: Power Factor Correction (PFC) circuits Full bridge topologies Half bridge topologies Push-Pull circuits Uninterruptible power supplies Zero voltage and zero current switching circuits Features 100kHz Operation at 390V, 40A 200kHZ Operation at 390V, 25A 600V Switching SOA Capability Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125oC Low Gate Charge . . . . . . . . . 70nC at VGE = 15V Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 480mJ Low Conduction Loss IGBT (co-pack) formerly Developmental Type TA49344 Diode formerly Developmental Type TA49392 Package JEDEC STYLE TO-247 E C G Symbol C G E Device Maximum Ratings TC= 25°C unless otherwise noted Symbol BVCES IC25 IC110 ICM VGES VGEM SSOA EAS PD TJ TSTG Parameter Collector to Emitter B...