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FGB20N6S2 Dataheets PDF



Part Number FGB20N6S2
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description 600V/ SMPS II Series N-Channel IGBT
Datasheet FGB20N6S2 DatasheetFGB20N6S2 Datasheet (PDF)

FGH20N6S2 / FGP20N6S2 / FGB20N6S2 August 2003 FGH20N6S2 / FGP20N6S2 / FGB20N6S2 600V, SMPS II Series N-Channel IGBT General Description The FGH20N6S2, FGP20N6S2, FGB20N6S2, are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and high avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for hig.

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FGH20N6S2 / FGP20N6S2 / FGB20N6S2 August 2003 FGH20N6S2 / FGP20N6S2 / FGB20N6S2 600V, SMPS II Series N-Channel IGBT General Description The FGH20N6S2, FGP20N6S2, FGB20N6S2, are Low Gate Charge, Low Plateau Voltage SMPS II IGBTs combining the fast switching speed of the SMPS IGBTs along with lower gate charge and plateau voltage and high avalanche capability (UIS). These LGC devices shorten delay times, and reduce the power requirement of the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low conduction loss, fast switching times and UIS capability are essential. SMPS II LGC devices have been specially designed for: • • • • • • Power Factor Correction (PFC) circuits Full bridge topologies Half bridge topologies Push-Pull circuits Uninterruptible power supplies Zero voltage and zero current switching circuits Features • 100kHz Operation at 390V, 7A • 200kHZ Operation at 390V, 5A • 600V Switching SOA Capability • Typical Fall Time . . . . . . . . . . 85ns at TJ = 125oC • Low Gate Charge . . . . . . . . . 30nC at VGE = 15V • Low Plateau Voltage . . . . . . . . . . . . . 6.5V Typical • UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 100mJ • Low Conduction Loss • Low Eon Formerly Developmental Type TA49330. Package TO-247 E C G Symbol C TO-220AB E C G TO-263AB G G E E COLLECTOR (Back-Metal) COLLECTOR (Flange) Device Maximum Ratings TC= 25°C unless otherwise noted Symbol BVCES IC25 IC110 ICM VGES VGEM SSOA EAS EARV PD TJ TSTG Parameter Collector to Emitter Breakdown Voltage Collector Current Continuous, TC = 25°C Collector Current Continuous, TC = 110°C Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed Switching Safe Operating Area at TJ = 150°C, Figure 2 Pulsed Avalanche Energy, ICE = 7.0A, L = 4mH, VDD = 50V Pulsed Avalanche Energy, ICE = 7.0A, L = 4mH, VDD = 50V Power Dissipation Total TC = 25°C Power Dissipation Derating TC > 25°C Operating Junction Temperature Range Storage Junction Temperature Range Ratings 600 28 13 40 ±20 ±30 35 at 600V 100 100 125 1.0 -55 to 150 -55 to 150 Units V A A A V V A mJ mJ W W/°C °C °C CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. Pulse width limited by maximum junction temperature. ©2003 Fairchild Semiconductor Corporation FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A2 FGH20N6S2 / FGP20N6S2 / FGB20N6S2 Package Marking and Ordering Information Device Marking 20N6S2 20N6S2 20N6S2 20N6S2 Device FGH20N6S2 FGP20N6S2 FGB20N6S2 FGB20N6S2T Package TO-247 TO-220AB TO-263AB TO-263AB Reel Size Tube Tube Tube 330mm Tape Width N/A N/A N/A 24mm Quantity 30 Units 50 Units 50 Units 800 Units Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics BVCES BVECS ICES IGES Collector to Emitter Breakdown Voltage IC = 250µA, VGE = 0 Emitter to Collector Breakdown Voltage IC = -10mA, VGE = 0 Collector to Emitter Leakage Current Gate to Emitter Leakage Current VCE = 600V VGE = ± 20V TJ = 25°C TJ = 125°C 600 20 250 2.0 ±250 V V µA mA nA On State Characteristics VCE(SAT) Collector to Emitter Saturation Voltage IC = 7.0A, VGE = 15V TJ = 25°C TJ = 125°C 2.2 1.9 2.7 2.2 V V Dynamic Characteristics QG(ON) VGE(TH) VGEP Gate Charge Gate to Emitter Threshold Voltage Gate to Emitter Plateau Voltage IC = 7.0A, VCE = 300V VGE = 15V VGE = 20V 3.5 30 38 4.3 6.5 36 45 5.0 8.0 nC nC V V IC = 250µA, VCE = 600V IC = 7.0A, VCE = 300V Switching Characteristics SSOA td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF Switching SOA Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 1) Turn-On Energy (Note 1) Turn-Off Energy (Note 2) Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 1) Turn-On Energy (Note 1) Turn-Off Energy (Note 2) IGBT and Diode at TJ = 125°C, ICE = 7A, VCE = 390V, VGE = 15V, RG = 25Ω L = 0.5mH Test Circuit - Figure 20 TJ = 150°C, RG = 25Ω, VGE = 15V , L = 0.5mH, Vce = 600V 35 - 7.7 4.5 87 50 25 85 58 7 4.5 120 85 20 125 135 75 145 105 140 180 A ns ns ns ns µJ µJ µJ ns ns ns ns µJ µJ µJ IGBT and Diode at TJ = 25°C, ICE = 7A, VCE = 390V, VGE = 15V, RG = 25Ω L = 0.5mH Test Circuit - Figure 20 Thermal Characteristics RθJC NOTE: 1. Values Thermal Resistance Junction-Case - - 1.0 °C/W for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in figure 20. 2. Turn-Off Energ.


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