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FFP04U40DN Dataheets PDF



Part Number FFP04U40DN
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description ULTRA FAST RECOVERY POWER RECTIFIER
Datasheet FFP04U40DN DatasheetFFP04U40DN Datasheet (PDF)

FFP04U40DN FFP04U40DN Features • Ultrafast with soft recovery • Low forward voltage Applications • • • • Power switching circuits Output rectifiers Freewheeling diodes Switching mode power supply TO-220 1 2 3 1. Anode 2.Cathode 3. Anode ULTRA FAST RECOVERY POWER RECTIFIER Absolute Maximum Ratings (per diode) TC=25°C unless otherwise noted Symbol VRRM IF(AV) IFSM TJ, TSTG Parameter Peak Repetitive Reverse Voltage Average Rectified Forward Current @ TC = 100°C Non-repetitive Peak Surge Current.

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FFP04U40DN FFP04U40DN Features • Ultrafast with soft recovery • Low forward voltage Applications • • • • Power switching circuits Output rectifiers Freewheeling diodes Switching mode power supply TO-220 1 2 3 1. Anode 2.Cathode 3. Anode ULTRA FAST RECOVERY POWER RECTIFIER Absolute Maximum Ratings (per diode) TC=25°C unless otherwise noted Symbol VRRM IF(AV) IFSM TJ, TSTG Parameter Peak Repetitive Reverse Voltage Average Rectified Forward Current @ TC = 100°C Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave Operating Junction and Storage Temperature Value 400 4 40 - 65 to +150 Units V A A °C Thermal Characteristics Symbol RθJC Parameter Maximum Thermal Resistance, Junction to Case Value 10 Units °C/W Electrical Characteristics (per diode) TC=25 °C unless otherwise noted Symbol VFM * Parameter Maximum Instantaneous Forward Voltage IF = 4A IF = 4A Maximum Instantaneous Reverse Current @ rated VR Maximum Reverse Recovery Time Maximum Reverse Recovery Current Maximum Reverse Recovery Charge (IF =4A, di/dt = 200A/µs) Avalanche Energy Min. TC = 25 °C TC = 100 °C TC = 25 °C TC = 100 °C 1.0 Typ. Max. 1.4 1.3 µA 10 100 45 3.0 68 ns A nC mJ Units V IRM * trr Irr Qrr WAVL * Pulse Test: Pulse Width=300µs, Duty Cycle=2% ©2000 Fairchild Semiconductor International Rev. F, September 2000 FFP04U40DN Typical Characteristics 30 1000 o Forward Current , IF [A] TC = 100 C o R [µA] 10 100 TC = 100 C 10 Reverse Current , I TC = 25 C 1 o 1 TC = 25 C 0.1 o 0.01 0.1 0.0 0.001 0.5 1.0 1.5 2.0 2.5 3.0 50 100 150 200 250 300 350 400 Forward Voltage , VF [V] Reverse Voltage , VR [V] Figure 1. Typical Forward Voltage Drop vs. Forward Current 200 50 Figure 2. Typical Reverse Current vs. Reverse Voltage Reverse Recovery Time , trr [ns] Typical Capacitance at 0V = 138 pF 45 IF = 4A o TC = 25 C Capacitance , Cj [pF] 150 40 100 35 30 50 25 0.1 1 10 100 20 100 500 Reverse Voltage , VR [V] di/dt [A/µs] Figure 3. Typical Junction Capacitance Figure 4. Typical Reverse Recovery Time vs. di/dt 6 Reverse Recovery Current , I [A] rr 5 IF = 4A o TC = 25 C Average Forward Current , I F(AV) [A] 6 5 4 4 DC 3 3 2 2 1 1 0 100 500 0 60 80 100 120 o 140 160 di/dt [A/µ s] Case Temperature , TC [ C] Figure 5. Typical Reverse Recovery Current vs. di/dt ©2000 Fairchild Semiconductor International Figure 6. Forward Current Derating Curve Rev. F, September 2000 FFP04U40DN Package Dimensions TO-220 9.90 ±0.20 1.30 ±0.10 2.80 ±0.10 4.50 ±0.20 (8.70) ø3.60 ±0.10 (1.70) 1.30 –0.05 +0.10 9.20 ±0.20 (1.46) 13.08 ±0.20 (1.00) (3.00) 15.90 ±0.20 1.27 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 2.54TYP [2.54 ±0.20] 10.08 ±0.30 18.95MAX. (3.70) (45° ) 0.50 –0.05 +0.10 2.40 ±0.20 10.00 ±0.20 Dimensions in Millimeters Rev. F, September 2000 ©2000 Fairchild Semiconductor International TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST® DISCLAIMER FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ POP™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time withou.


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