M1MA141WAT1

www.DataSheet4U.com M1MA141WAT1, M1MA142WAT1 Preferred Device Common Anode Silicon Dual Switching Diode This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC−70 package which is designed for low power surface mount applications. Features http://onsemi.com ANODE 3 Fast trr, < 10 ns Low CD, < 15 pF Pb−Free Package is Available MAXIMUM RATINGS (TA = 25°C) Rating Reverse Voltage M1MA141WAT1 M1MA142WAT1 Peak Reverse Voltage M1MA141WAT1 M1MA142WAT1 Forward Current Single Dual Peak Forward Current Single Dual Peak Forward Surge Current M1MA141WAT1 M1MA142WAT1 IFSM (Note 1) IFM 225 340 mAdc 500 750 Mx = Device Code x = N for 141 O for 142 M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. IF 100 150 mAdc Mx M G G VRM 40 80 mAdc Symbol VR 40 80 1 1 CATHODE 2 Value Unit Vdc 3 Vdc SC−70 (SOT−323) CASE 419 STYLE 4 2 MARKING DIAGRAM THERMAL CHARACTERISTICS Rating Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 150 150 −55 ~ + 150 Unit mW °C °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and relia...