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LX802

Part Number	LX802
Manufacturer	Polyfet RF Devices
Description	SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Published	Mar 30, 2005
Detailed Description	polyfet rf devices LX802 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF ...
Datasheet	LX802 PDF File

Overview

polyfet rf devices LX802 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.
Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency.
TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 30.
0 Watts Single Ended Package Style LX2 HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 80 Watts Junction to Case Thermal Resistance o 1.
80 C/W Maximum Junction Temperature o ...

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