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3SK260

Silicon N Channel Dual Gate MOS Type FET

Description

3SK260 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK260 TV Tuner VHF Mixer Applications VHF RF Amplifier Applications Unit: mm · High conversion gain: GCS = 24.5dB (typ.) · Low noise figure: NFCS = 3.3dB (typ.) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate 1-source voltage Gate 2-source voltage Drain cu...

Toshiba Semiconductor

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