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D2030UK Dataheets PDF



Part Number D2030UK
Manufacturers Seme LAB
Logo Seme LAB
Description METAL GATE RF SILICON FET
Datasheet D2030UK DatasheetD2030UK Datasheet (PDF)

TetraFET D2030UK METAL GATE RF SILICON FET MECHANICAL DATA Dimensions in mm. 5.50 ± 0.15 1.27 ± 0.05 2 PL. 2 PL. 0.47 1.65 2 PL. 0.3 R. 4 PL. 2.313 ± 0.2 4 3 3.00 2.07 0.381 2 PL. 2 PL. 5 1.27 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz SINGLE ENDED 0.360 ± 0.005 6 1.27 6.50 ± 0.15 2 1 0.47 2 PL. 0.80 4 PL. 4.90 ± 0.15 7 1.27 8 0.10 R. TYP. FEATURES 0.10 TYP. 0.508 0.10 TYP. • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS F-0127 PACKAGE P.

  D2030UK   D2030UK


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TetraFET D2030UK METAL GATE RF SILICON FET MECHANICAL DATA Dimensions in mm. 5.50 ± 0.15 1.27 ± 0.05 2 PL. 2 PL. 0.47 1.65 2 PL. 0.3 R. 4 PL. 2.313 ± 0.2 4 3 3.00 2.07 0.381 2 PL. 2 PL. 5 1.27 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz SINGLE ENDED 0.360 ± 0.005 6 1.27 6.50 ± 0.15 2 1 0.47 2 PL. 0.80 4 PL. 4.90 ± 0.15 7 1.27 8 0.10 R. TYP. FEATURES 0.10 TYP. 0.508 0.10 TYP. • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS F-0127 PACKAGE PIN 1 – SOURCE PIN 2 – DRAIN PIN 3 – DRAIN PIN 4 – SOURCE PIN 5 – SOURCE PIN 6 – GATE PIN 7 – GATE PIN 8 – SOURCE • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 13 dB MINIMUM Ceramic Material: Alumina. Parts can also be supplied with AlN or BeO for improved thermal resistance. Contact Semelab for details. APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Semelab plc. Power Dissipation Drain – Source Breakdown Voltage * Gate – Source Breakdown Voltage* Drain Current Storage Temperature Maximum Operating Junction Temperature Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. Website http://www.semelab.co.uk E-mail: [email protected] 30W 65V ±20V 2A –65 to 150°C 200°C Prelim. 2/99 D2030UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. BVDSS IDSS IGSS gfs GPS η Ciss Coss Crss Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 5W VDS = 28V f = 1GHz VDS = 0V VDS = 28V VDS = 28V VGS = –5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz IDQ = 0.4A ID = 10mA VGS = 0 VDS = 0 VDS = VGS ID = 0.4A 1 0.36 13 40 20:1 65 Typ. Max. Unit V 2 1 5 mA µA V S dB % — 24 12 1 pF pF pF VGS(th) Gate Threshold Voltage* VSWR Load Mismatch Tolerance * Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2% THERMAL DATA RTHj–case Thermal Resistance Junction – Case Max. 6°C / W Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. Website http://www.semelab.co.uk E-mail: [email protected] Prelim. 2/99 .


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