TetraFET
D2003UK
METAL GATE RF SILICON FET
MECHANICAL DATA
B H C 2 3 1 A D E 5 4 F G
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz PUSH–PULL
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
J K
I
N
M
O
• SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE
DQ
PIN 1 PIN 3 PIN 5 SOURCE (COMMON) PIN 2 DRAIN 2 PIN 4 GATE 1 DRAIN 1 GATE 2
DIM mm A 16.38 B 1.52 C 45° D 6.35 E 3.30 F 14.22 G 1.27 x 45° H 1.52 I 6.35 J 0.13 K 2.16 M 1.52 N 5.08 O 18.90
Tol. 0.26 0.13 5° 0.13 0.13 0.13 0.13 0.13 0.13 0.02 0.13 0.13 MAX 0.13
Inches 0.645 0.060 45° 0.250 0.130 0.560 0.05 x 45° 0.060 0.250 0.005 0.085 0.060 0.200 0.744
Tol. 0.010 0.005 5° 0.005 0.005 0.005 0.005 0.005 0.005 0.001 0.005 0.005 MAX 0.005
• HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
• VHF/UHF COMMUNICATIONS from 50 MHz to 1 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD BVDSS BVGSS ID(sat) Tstg Tj * Per Side Semelab plc. Power Dissipation Drain – Source Breakdown Voltage * Gate – Source Breakdown Voltage * Drain Current * Storage Temperature Maximum Operating Junction Temperature 35W 65V ±20V 1A –65 to 150°C 200°C
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Document Number 3416 Issue 1
D2003UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min.
PER SIDE
BVDSS IDSS IGSS VGS(th) gfs GPS η VSWR Ciss Coss Crss Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Gate Threshold Voltage* Forward Transconductance* Common Source Power Gain Drain Efficiency Load Mismatch Tolerance Input Capacitance Output Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 5W VDS = 28V f = 1GHz IDQ = 0.2A ID = 10mA VGS = 0 VDS = 0 VDS = VGS ID = 1A 1 0.18 13 40 20:1 65
Typ.
Max. Unit
V 1 1 7 mA µA V S dB % — 12 6 0.5 pF pF pF
TOTAL DEVICE
PER SIDE
VDS = 28V VDS = 28V VGS = –5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz
Reverse Transfer Capacitance VDS = 28V
* Pulse Test:
Pulse Duration = 300 µs , Duty Cycle ≤ 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHj–case Thermal Resistance Junction – Case Max. 5.0°C / W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail:
[email protected] Website: http://www.semelab.co.uk
Document Number 3416 Issue 1
D2003UK
3RXW :
*DLQ G%
3RXW :
9GV 9 ,GT $ I *+]
'UDLQ(IILFLHQF\
9GV 9 ,GT $ I *+]
3LQ:
3RXW 'UDLQ(IILFLHQF\
3RXW *DLQ
3LQ:
Figure 1 Output Power and Gain vs. Input power
,0' G%F
Figure 2 Output Power and Efficiency vs. Input Power
OPTIMUM SOURCE AND LOAD IMPEDANCE Frequency MHz 1000MHZ
I 0+] I 0+] 9GV 9
3RXW:3(3
,GT $ ,GT $
ZS Ω 1.1 - j2.5
ZL Ω 5.1 - j17.1
Figure 3 IMD Vs. Output Power.
Typical S Parameters
! Vds=28V, Idq=0.1A # MHZ S MA R 50
!Freq !MHz 70 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000
S11 mag 0.97 0.94 0.88 0.84 0.82 0.79 0.78 0.77 0.77 0.77 0.78 0.78 0.78 0.79 0.79 0.78 0.78 0.79 0.78 0.79
ang -36.4 -48.0 -65.3 -78.5 -88.4 -97.1 -105.5 -113.3 -121.8 -128.9 -136.7 -144.0 -150.8 -156.7 -160.9 -164.2 -166.3 -168.5 -170.3 -172.5
S21 mag 15.8 14.1 12.3 10.2 8.8 7.7 6.9 6.0 5.4 4.9 4.6 4.4 4.0 3.7 3.4 3.0 2.7 2.6 2.5 2.4
ang 156.6 146.3 129.9 114.7 106.0 98.3 88.5 84.5 77.8 75.3 68.3 65.4 57.2 52.3 46.7 41.4 39.5 38.4 36.8 33.0
S12 mag 0.017 0.021 0.027 0.029 0.029 0.029 0.028 0.026 0.024 0.022 0.020 0.020 0.020 0.022 0.025 0.028 0.032 0.036 0.044 0.053
ang 67.2 58.1 45.5 34.8 28.1 27.3 22.2 24.2 23.3 29.6 35.0 46.6 57.6 68.5 76.6 81.6 87.8 92.3 97.4 97.4
S22 mag 0.91 0.88 0.81 0.77 0.75 0.73 0.72 0.71 0.70 0.70 0.70 0.70 0.70 0.71 0.70 0.69 0.68 0.68 0.70 0.70
ang -23.2 -30.1 -40.3 -48.1 -54.2 -59.1 -64.3 -69.3 -75.2 -80.4 -86.5 -93.6 -99.6 -105.8 -111.3 -115.6 -117.0 -119.3 -121.0 -124.2
Document Number 3416 Issue 1
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail:
[email protected] Website: http://www.semelab.co.uk
D2003UK
1 0
G a te - B ia s
1 K 2 1 0 0 n F 1 n F 1 K 2 1 K 2 L 1 T 1 1 3 0 p F T 3 T 4 T 5 T 6 D 2 0 0 3 U K L 2 T 1 2 T 1 3
+ 2 8 V
L 3 6 .8 K 1 0 n F 1 0 0 u F
T 2 T 1 1 -1 0 p F
3 0 p F 3 .6 p F 9 .1 p F 1 -1 0 p F
T 1 7
1 -1 0 p F
3 .6 p F
3 0 p F
3 0 p F T 7 T 8 T 9 T 1 0 D 2 0 0 3 U K T 1 4 T 1 5 T 1 6
1000MHz TEST FIXTURE
Substrate 0.8mm thick PTFE/glass All microstrip lines W = 2.7mm T1 T2, T17 T3, T7 .