D1FS6

D1FS6 Schottky Barrier Diodes 60V, 1.1A Feature ・Small SMD ・High Recovery Speed ・Low VF ・Based on AEC-Q101 ・Pb free terminal ・RoHS:Yes OUTLINE Package (House Name): 1F Package (JEDEC Code): DO-214AC Equivalent circuit Absolute Maximum Ratings (unless otherwise specified : Tl=25℃) Item Symbol Conditions Ratings Unit Storage temperrature Tstg -55 to 150 ℃ Junction temperature Tj 150 ℃ Repetitive peak reverse voltage VRRM 60 V Repetitive peak surge reverse voltage VRRSM Pulse width 0.5ms, duty=1/40 65 V Average forward current IF(AV) 50Hz sine wave, Resistance load, On alumina substrate, Ta=38℃ 1.1 A 50Hz sine wave, Resistance load, On glass-epoxy Average forward current IF(AV) substrate, Ta=33℃ 0.82 A Surge forward current 50Hz sine wave, Non-repetitive, 1cycle, Peak value, IFSM Tj=125℃ 40 A Repetitive peak surge reverse power PRRSM Pulse width 10µs, Tj=25℃ 60 W ※︓See the original Specifications Shindengen Electric Manufacturing Co., Ltd. 1/7 D1FS6_Rev.01(2020.01) Electrical Characteristics (unless otherwise specified : Tl=25℃) Item Symbol Conditions Forward voltage Reverse current Total capacitance Thermal resistance Thermal resistance Thermal resistance VF IR Ct Rth(j-l) Rth(j-a) Rth(j-a) IF=1.1A, Pulse measurement VR=60V, Pulse measurement f=1MHz, VR=10V Junction to lead Junction to ambient, On alumina substrate Junction to ambient, On glass-epoxy substrate ※︓See the original Specifications Ratings MIN TYP MAX 0.58 1 50...