D1094

TetraFET D1094UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 400MHz SINGLE ENDED FEATURES SIMPLIFIED AMPLIFIER DESIGN SUITABLE FOR BROAD BAND APPLICATIONS VERY LOW Crss SIMPLE BIAS CIRCUITS LOW NOISE HIGH GAIN – 11 dB MINIMUM SOT 171 PIN 1 PIN 3 PIN 5 SOURCE GATE SOURCE PIN 2 PIN 4 PIN 6 SOURCE DRAIN SOURCE APPLICATIONS HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current * Storage Temperature Maximum Operating Junction Temperature 50W 65V ±20V 6A –65 to 150°C 200°C Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: [email protected] Website http://www.semelab.co.uk Prelim. 3/00 D1094UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. BVDSS IDSS IGSS gfs GPS Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance * Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 20W VDS = 28V f = 400MHz VDS = 0 VDS = 28V VDS = 28V VGS = –5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz IDQ = 0.6A ID = 10mA VGS = 0 VDS = 0 VDS = VGS ID = 0.6A 1 1.08 11 50 20:1 65 Typ. Max. Unit V 6 6 7 mA mA V ...