D1015UK

TetraFET D1015UK METAL GATE RF SILICON FET MECHANICAL DATA B (4 pls) C G (typ) 2 1 A D 3 E 5 I F 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 125W – 28V – 400MHz PUSH–PULL FEATURES SIMPLIFIED AMPLIFIER DESIGN N M H J K SUITABLE FOR BROAD BAND APPLICATIONS DRAIN 1 GATE 2 DH PIN 1 PIN 3 PIN 5 SOURCE (COMMON) DRAIN 2 GATE 1 DIM A B C D E F G H I J K M N mm 13.97 5.72 45° 9.78 1.65R 23.75 1.52R 30.48 19.17 0.13 2.54 1.52 5.08 Tol. 0.26 0.13 5° 0.13 0.13 0.13 0.13 0.13 0.26 0.02 0.13 0.13 0.50 Inches 0.550 0.225 45° 0.385 0.065R 0.935 0.060R 1.200 0.755 0.005 0.100 0.060 0.200 Tol. 0.010 0.005 5° 0.005 0.005 0.005 0.005 0.005 0.010 0.001 0.005 0.005 0.020 PIN 2 PIN 4 LOW Crss SIMPLE BIAS CIRCUITS LOW NOISE HIGH GAIN – 13 dB MINIMUM APPLICATIONS HF/VHF/UHF COMMUNICATIONS from 1 MHz to 400 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj * Per Side Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 11/00 Power Dissipation Drain – Source Breakdown Voltage * Gate – Source Breakdown Voltage * Drain Current * Storage Temperature Maximum Operating Junction Temperature 350W 70V ±20V 20A –65 to 150°C 200°C D1015UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. PER SIDE BVDSS IDSS IGSS gfs GPS Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage ...