TetraFET
D1004UK
METAL GATE RF SILICON FET
MECHANICAL DATA
C D (2 pls) E
B
1
2
3
A
G
5
4
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 175MHz SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
H I
F
M
K
J
N
• SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE
DT
PIN 1 PIN 3 PIN 5 SOURCE (COMMON) PIN 2 SOURCE (COMMON) PIN 4 DRAIN DIM A B C D E F G H I J K M N mm 6.35 DIA 3.17 DIA 18.41 5.46 5.21 7.62 21.59 3.94 12.70 0.13 24.76 2.59 4.06 Tol. 0.13 0.13 0.25 0.13 0.13 MAX 0.38 0.13 0.13 0.03 0.13 0.13 0.25 Inches 0.250 DIA 0.125 DIA 0.725 0.215 0.205 0.300 0.850 0.155 0.500 0.005 0.975 0.102 0.160 Tol. 0.005 0.005 0.010 0.005 0.005 MAX 0.015 0.005 0.005 0.001 0.005 0.005 0.010 GATE SOURCE (COMMON)
• HIGH GAIN – 16 dB MINIMUM
APPLICATIONS
• HF/VHF COMMUNICATIONS from 1 MHz to 175 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 175W 70V ±20V 20A –65 to 150°C 200°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail:
[email protected]
Prelim. 6/99
D1004UK
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min.
BVDSS IDSS IGSS gfs GPS η Ciss Coss Crss Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance * Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 80W VDS = 28V f = 175MHz VDS = 28V VDS = 28V VDS = 28V VGS = –5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz IDQ = 0.4A ID = 100mA VGS = 0 VDS = 0 VDS = VGS ID = 4A 1 3.2 16 50 20:1 70
Typ.
Max. Unit
V 4 1 7 mA µA V S dB % — 240 120 10 pF pF pF
VGS(th) Gate Threshold Voltage *
VSWR Load Mismatch Tolerance
* Pulse Test:
Pulse Duration = 300 µs , Duty Cycle ≤ 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHj–case Thermal Resistance Junction – Case Max. 1.0°C / W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail:
[email protected]
Prelim. 6/99
D1004UK
150 125 100
P out
80 70 60
Efficiency
150 125 100
P out
22 20 18
Gain
75
W
50
50 25 0
VDS = 28V IDQ = 0.4A f = 175MHz
%
75
W
16
dB
40 30 20
50 25 0 0
VDS = 28V IDQ = 0.4A f = 175MHz
14 12 10
0
1
2
3
4
P in W
5
6
7
8
1
2
3
4
P in W
5
6
Pout Gain
7
8
Pout Drain Efficiency
Figure 1 – Power Output and Efficiency vs. Power Input.
-20
Figure 2 – Power Output & Gain vs. Power Input.
-25
D1004UK
OPTIMUM SOURCE AND LOAD IMPEDANCE
VDS = 28V f1 = 175.0MHz f2 = 175.1MHz IDQ = 0.4A
IMD dBc
-30
-35
-40
-45
Frequency MHz 175MHz
90
ZS ZL Ω Ω 2.2 + j1.9 3.2 - j0.5
10
20
30
40
50
60
70
IMD3
80
P out W PEP
Figure 3 – IMD vs. Output Power.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail:
[email protected]
Prelim. 6/99
D1004UK
12Ω
+28V
Gate-Bias
10kΩ
L4 100nF 10nF 22µF
10kΩ 5.1nF 1-70pF T1 1-70pF L1 T2
D1004K
8 x5 mm contact pad
L3 5.1nF T3 L2 1-70pF 1-70pF
8 x5 mm contact pad
D1004UK 175MHz TEST FIXTURE
Substrate 1.6mm PTFE/ glass, Er= 2.5 All microstrip lines W=4.4mm T1 T2 T3 7.5mm 6mm 8mm L1 L2 L3 L4 Hairpin loop 16swg 13mm dia Hairpin loop 16swg 11mm dia 10 turns 18swg enamelled copper wire, 4mm i.d. 12 turns 18swg enamelled copper wire on 22.7mm o.d. ferrite core
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail:
[email protected]
Prelim. 6/99
.