D45C11

D45C11 — PNP Current Driver Transistor D45C11 PNP Current Driver Transistor January 2010 Features This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5P. NZT751 for characteristics. 1 TO-220 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO IC TJ, TSTG Collector-Emitter Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range -80 V -4.0 A -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA=25°C unless otherwise noted Symbol Parameter PD Total Device Dissipation Derate above 25°C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. 60 480 2.1 62.5 Units W mW/°C °C/W °C/W © 2009 Fairchild Semiconductor Corporation D45C11 Rev. B2 1 www.fairchildsemi.com D45C11 — PNP Current Driver Transistor Electrical Characteristics TA=25°C unless otherwise noted Symbol Parameter Test Condition Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage IC = -100mA, IB = 0 ICES Collector-Cutoff Current VCE = -90V, ...