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D2232UK Dataheets PDF



Part Number D2232UK
Manufacturers Seme LAB
Logo Seme LAB
Description METAL GATE RF SILICON FET
Datasheet D2232UK DatasheetD2232UK Datasheet (PDF)

TetraFET D2232UK METAL GATE RF SILICON FET MECHANICAL DATA Dimensions in mm. 5.50 ± 0.15 1.27 ± 0.05 2 PL. 2 PL. 0.47 1.65 2 PL. 0.3 R. 4 PL. 2.313 ± 0.2 4 3 3.00 2.07 0.381 2 PL. 2 PL. 5 1.27 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 7.2V – 850MHz SINGLE ENDED 0.360 ± 0.005 6 1.27 6.50 ± 0.15 2 1 0.47 2 PL. 0.80 4 PL. 4.90 ± 0.15 7 1.27 8 0.10 R. TYP. FEATURES 0.10 TYP. 0.508 0.10 TYP. • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS F-0127 PACKAG.

  D2232UK   D2232UK



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TetraFET D2232UK METAL GATE RF SILICON FET MECHANICAL DATA Dimensions in mm. 5.50 ± 0.15 1.27 ± 0.05 2 PL. 2 PL. 0.47 1.65 2 PL. 0.3 R. 4 PL. 2.313 ± 0.2 4 3 3.00 2.07 0.381 2 PL. 2 PL. 5 1.27 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 7.2V – 850MHz SINGLE ENDED 0.360 ± 0.005 6 1.27 6.50 ± 0.15 2 1 0.47 2 PL. 0.80 4 PL. 4.90 ± 0.15 7 1.27 8 0.10 R. TYP. FEATURES 0.10 TYP. 0.508 0.10 TYP. • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS F-0127 PACKAGE PIN 1 – SOURCE PIN 2 – DRAIN PIN 3 – DRAIN PIN 4 – SOURCE PIN 5 – SOURCE PIN 6 – GATE PIN 7 – GATE PIN 8 – SOURCE • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN Ceramic Material: Alumina. Parts can also be supplied with AlN or BeO for improved thermal resistance. Contact Semelab for details. APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 29W 40V ±20V 8A –65 to 150°C 200°C Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. Website http://www.semelab.co.uk E-mail: [email protected] Prelim. 5/99 D2232UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter BVDSS IDSS IGSS gfs GPS η Ciss Coss Crss Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0 VDS = 12.5V VGS = 20V ID = 10mA VDS = 10V PO = 5W VDS = 7.2V f = 850MHz VDS = 0V VGS = –5V f = 1MHz f = 1MHz f = 1MHz VDS = 12.5V VGS = 0 VDS = 12.5V VGS = 0 IDQ = 0.4A ID = 10mA VGS = 0 VDS = 0 VDS = VGS ID = 0.8A Min. 40 Typ. Max. Unit V 1 4 mA µA V S dB % — 48 40 4 pF pF pF VGS(th) Gate Threshold Voltage* 0.5 0.72 7 50 20:1 7 VSWR Load Mismatch Tolerance * Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2% THERMAL DATA RTHj–case Thermal Resistance Junction – Case Max. 6°C / W Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. Website http://www.semelab.co.uk E-mail: [email protected] Prelim. 5/99 .


D2231UK D2232UK D2253UK


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