Very High-Speed Switching Diode
Ordering number : EN1895B
DCB010
Silicon Epitaxial Planar Type (Cathode Common)
DCB010
Very High-Speed Switching Diode...
Description
Ordering number : EN1895B
DCB010
Silicon Epitaxial Planar Type (Cathode Common)
DCB010
Very High-Speed Switching Diode
Features
Package Dimensions
unit : mm 1169A
[DCB010]
0.5
0.4 0.16 0 to 0.1
Ideally suited for use in hybrid ICs because of very small-sized package. Fast switching speed. Small interterminal capacitance.
Electrical Connection
Cathode
3
3
1 0.95 0.95 2 1.9 2.9
0.5
1.5 2.5
1 : Anode 2 : Anode 3 : Cathode SANYO : CP
1
2
(Top view)
Anode
Anode
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Peak Reverse Voltage Reverse Voltage Peak Forward Current Average Rectified Current Surge Current (1µs) Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VRM VR IFM IFMg IO IOg IFSM IFSMg P Tj Tstg g : Total value Conditions Ratings 85 80 300 450 100 150 4 6 200 125 --55 to +125 Unit V V mA mA mA mA A A mW °C °C
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values...
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