DBB10

Ordering number:EN1061D DBB10 Diffused Junction Silicon Diode 1.0A Single-Phase Bridge Rectifier Features · Plastic molded structure. · Peak reverse voltage:VRM=100 to 600V. · Average rectified current:IO=1.0A. Package Dimensions unit:mm 1112 [DBB10] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Peak Reverse Voltage Average Recitified Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRM IO IFSM Tj Tstg 50Hz sine wave, 1cycle Conditions DBB10B 100 → → → → DBB10E 400 → → → DBB10G 600 1.0 30 150 Unit V A A ˚C ˚C → –40 to +150 Electrical Characteristics at Ta = 25˚C, per constituent element of bridge Parameter Forward Voltage Reverse Current Symbol VF IR IF=0.5A VRM:At each VRM Conditions Ratings min typ max 1.0 10 Unit V µA SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/62096GI (KOTO)/6038TA/5202KI, TS No.1061-1/2 DBB10 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries an...