DIAC
DB3 DB4 SMDB3
®
DIAC
FEATURES
s VBO : 32V and 40V s LOW BREAKOVER CURRENT
DESCRIPTION
Functioning as a trigger diode w...
Description
DB3 DB4 SMDB3
®
DIAC
FEATURES
s VBO : 32V and 40V s LOW BREAKOVER CURRENT
DESCRIPTION
Functioning as a trigger diode with a fixed voltage reference, the DB3/DB4 series can be used in conjunction with triacs for simplified gate control circuits or as a starting element in fluorenscent lamp ballasts.
A new surface mount version is now available in SOT-23 package, providing reduced space and compatibility with automatic pick and place equipment.
DO-35 (DB3 and DB4)
2 3
1
SOT-23 (SMDB3)* Pin 1 and 3 must be shorted together
ABSOLUTE MAXIMUM RATINGS (limiting values)
Symbol
Parameter
ITRM Repetitive peak on-state current tp = 20 µs F= 120 Hz
Tstg Storage temperature range Tj Operating junction temperature range
Value
Unit
SMDB3
1.00 A
DB3 / DB4
2.00
- 40 to + 125 °C
Note: * SMDB3 indicated as Preliminary spec as product is still in development stage.
October 2001 - Ed: 2B
1/5
DB3 DB4 SMDB3
ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified)
Symbol
Parameter
Test Conditions
SMDB3 DB3 DB4 Unit
VBO
Breakover voltage *
C = 22nF **
MIN.
TYP.
MAX.
I VBO1 - VBO2 I Breakover voltage symmetry
C = 22nF **
MAX.
∆ V Dynamic breakover VBO and VF at 10mA MIN. voltage *
VO Output voltage *
see diagram 2 (R=20Ω)
MIN.
IBO
Breakover current *
C = 22nF **
MAX.
tr Rise time *
see diagram 3
MAX.
IR
Leakage current *
VR = 0.5 VBO max MAX.
IP Peak current *
* Applicable to both forward and reverse directions. ** Connected in parallel to the d...
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