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Part Number DB3
Manufacturers Shanghai Sunrise Electronics
Logo Shanghai Sunrise Electronics
Description BIDIRECTIONAL TRIGGER DIODE
Datasheet DB3 DatasheetDB3 Datasheet (PDF)

SHANGHAI SUNRISE ELECTRONICS CO., LTD. DB3 BIDIRECTIONAL TRIGGER DIODE BREAKOVER VOLTAGE: 32V POWER: 150mW FEATURES • VBO: 26 ~ 36V version • Low breakover current • High temperature soldering guaranteed: 250oC/10S/9.5mm lead length at 5 lbs tension TECHNICAL SPECIFICATION DO - 35 1.0 (25.4) MIN. .120 (3.0) .200 (5.1) 1.0 (25.4) MIN. .060 (1.5) .090 (2.3) DIA. MECHANICAL DATA • Terminal: Plated axial leads solderable per MIL-STD 202E, method 208C • Case: Glass,hermetically sealed • Mounting .

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SHANGHAI SUNRISE ELECTRONICS CO., LTD. DB3 BIDIRECTIONAL TRIGGER DIODE BREAKOVER VOLTAGE: 32V POWER: 150mW FEATURES • VBO: 26 ~ 36V version • Low breakover current • High temperature soldering guaranteed: 250oC/10S/9.5mm lead length at 5 lbs tension TECHNICAL SPECIFICATION DO - 35 1.0 (25.4) MIN. .120 (3.0) .200 (5.1) 1.0 (25.4) MIN. .060 (1.5) .090 (2.3) DIA. MECHANICAL DATA • Terminal: Plated axial leads solderable per MIL-STD 202E, method 208C • Case: Glass,hermetically sealed • Mounting position: Any .018 (0.46) .022 (0.56) DIA. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND CHARACTERISTICS (Rating at 25oC ambient temperature unless otherwise specified) RATINGS Breakover Voltage * Breakover Voltage Symmetry Dynamic Breakover Voltage * Output Voltage * Breakover Current * Rise Time * Leakage Current * Power Dissipation on Printed Circuit Repetitive Peak on-state Current TEST CONDITION C=22nF ** C=22nF ** (Note 1) C=22nF ** VR=0.5VBO Ta=65 C tp=20µS f=100Hz o SYMBOL VBO |+ VBO|-|-VBO| |∆V ± | VO IBO tr IB Pd ITRM Min. 26 -3 5 5 VALUE Typ. Max. 32 36 3 UNITS V V V V µA µS µA mW A o 100 1.5 10 150 2 400 150 -40 125 Rθ(ja) Thermal Junction to Ambient Rθ(jl) Resistances Junction to Lead Operating Junction and Storage TJ,TSTG Temperature Range * : Electrical characteristic applicable in forward and reverse directions. ** : Connected in parallel with the devices. Note: 1. IF from IBO to 10mA. C/W o C http://www.sse-diode.com .


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