DB3

DB3 DB4 SMDB3 ® DIAC FEATURES s VBO : 32V and 40V s LOW BREAKOVER CURRENT DESCRIPTION Functioning as a trigger diode with a fixed voltage reference, the DB3/DB4 series can be used in conjunction with triacs for simplified gate control circuits or as a starting element in fluorenscent lamp ballasts. A new surface mount version is now available in SOT-23 package, providing reduced space and compatibility with automatic pick and place equipment. DO-35 (DB3 and DB4) 2 3 1 SOT-23 (SMDB3)* Pin 1 and 3 must be shorted together ABSOLUTE MAXIMUM RATINGS (limiting values) Symbol Parameter ITRM Repetitive peak on-state current tp = 20 µs F= 120 Hz Tstg Storage temperature range Tj Operating junction temperature range Value Unit SMDB3 1.00 A DB3 / DB4 2.00 - 40 to + 125 °C Note: * SMDB3 indicated as Preliminary spec as product is still in development stage. October 2001 - Ed: 2B 1/5 DB3 DB4 SMDB3 ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Symbol Parameter Test Conditions SMDB3 DB3 DB4 Unit VBO Breakover voltage * C = 22nF ** MIN. TYP. MAX. I VBO1 - VBO2 I Breakover voltage symmetry C = 22nF ** MAX. ∆ V Dynamic breakover VBO and VF at 10mA MIN. voltage * VO Output voltage * see diagram 2 (R=20Ω) MIN. IBO Breakover current * C = 22nF ** MAX. tr Rise time * see diagram 3 MAX. IR Leakage current * VR = 0.5 VBO max MAX. IP Peak current * * Applicable to both forward and reverse directions. ** Connected in parallel to the d...