DAN235E

DAN235E / DAN235U Diodes Band switching diode DAN235E / DAN235U !Applications High frequency switching !External dimensions (Units : mm) DAN235E DAN235U 2.0±0.2 1.6±0.2 1.0±0.1 0.2 +0.1 −0.05 1.3±0.1 +0.1 −0.05 0.9±0.1 0.3 0.6 0~0.1 0.3 0.3±0.1 0.15±0.05 (All leads have the same dimensions) !Construction Silicon epitaxial planar ROHM : EMD3 EIAJ : SC - 75 JEDEC : SOT-416 ROHM : UMD3 EIAJ : SC - 70 JEDEC : SOT-323 !Circuit !Absolute maximum ratings (Ta=25°C) Parameter DC reverse voltage Power dissipation Junction temperature Storage temperature Symbol VR Limits 35 150 125 −55~+125 Unit V mW Pd Tj Tstg °C °C 0.1Min. +0.1 −0.05 0.15±0.05 0.1Min. M M !Features 1) Small surface mounting type. (EMD3, UMD3) 2) High reliability. 0.5 0.5 0.7±0.1 0.55±0.1 0.65 0.65 0.2 0.8±0.1 1.25±0.1 2.1±0.1 1.6±0.2 0~0.1 DAN235E / DAN235U Diodes !Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Capacitance between terminals Forward operating resistance Symbol VF IR CT rF Min. − − − − Typ. 0.85 0.01 0.87 0.65 Max. 1.0 10 1.2 0.9 Unit V nA pF Ω IF=10mA VR=25V VR=6V, f=1MHz IF=2mA, f=100MHz Conditions !Electrical characteristic curves (Ta=25°C) Ta=25°C REVERSE CURRENT : IR (nA) FORWARD CURRENT : IF (A) 0.5 Ta=25°C n=50pcs CAPACITANCE BETWEEN TERMINALS : CT (pF) 100m 1.0 10 5 f=1MHz 10m 0.2 0.1 0.05 2 1 0.5 1m 100µ 0.02 0.2 0.1 0 10µ 0.6 0.7 0.8 0.9 1.0 0.01 0 5 10 15 20 25 30 35 2 4 6 8 10 12 14 FORWARD ...