DALC12

® DALC112S1 LOW CAPACITANCE DIODE ARRAY FOR ESD PROTECTION Application Specific Discretes A.S.D.TM MAIN APPLICATIONS Where ESD protection for high speed datalines is required : LAN / WAN equipment Computer I/O Graphic video port Set top box I/O DESCRIPTION ARRAY of 12 diodes configured by cells of 2 diodes, each cell being used to protect signal line from transient overvoltages by clamping action. Its very low capacitance allows to protect fast signals with no distortion. It is particularlysuited for the protection of graphic video ports. FEATURES ARRAYOF 12 DIODESFOR ESDPROTECTION. PEAK REVERSE VOLTAGE VRRM= 18V PER DIODE. VERYLOWCAPACITANCE PERDIODE: C <5pF. VERY LOW LEAKAGE CURRENT : IR < 2 µA. I/O 1 SO8 FUNCTIONAL DIAGRAM REF 1 I/O 2 I/O 3 I/O 6 REF 2 COMPLIESWITHTHE FOLLOWINGSTANDARDS : IEC1000-4-2level 3 8 kV (air discharge) 6 kV (contactdischarge) I/O 4 I/O 5 January 1998 - Ed: 4 1/3 DALC112S1 TYPICAL APPLICATION Vcc DALC112S1 ABSOLUTE MAXIMUM RATINGS (Tamb =25°C). Symbol VRRM Tstg Tj Parameter Peak reverse voltage per diode Storage temperature range Maximum junction temperature Value 18 -55 to + 150 150 Unit V °C °C ELECTRICAL CHARACTERISTICS (Tamb = 25°C). Symbol VF IR C Forward voltage Reverse leakage current per diode Input capacitance between Line and GND Vcc = 5 V, VRMS = 30 mV, F = 1 MHz (see figure 1 below) Parameter IF = 50 mA VR = 15 V 7 Typ. Max. 1.3 2 Unit V µA pF Fig 1 : Input capacitance measurement REF2 I/O G REF1 VCC +VCC connected...