SUBMINIATURE PHOTOINTERRUPTER
Description
The MIT-4A11B consists of a Gallium Arsenide infrared emitting diode and a NPN...
SUBMINIATURE PHOTOINTERRUPTER
Description
The MIT-4A11B consists of a Gallium Arsenide infrared emitting diode and a
NPN silicon photo
transistor , double-layer mold plastic package. It is a transmissive subminiature photointerrupter.
MIT-4A11B
Package Dimensions
Unit : mm
2
C
E
3
1
A `4.2
C
4
Features
l l l l
Ultra-compact PWB mounting type package High sensing accuracy ( Slit width: 0.3mm ) Gap between light emitter and detector: 1.2mm
4.2 1.5
(1.0)
(0.3)
1.2
2.8 3.9 5.2
Applications
l l l
Cameras Floppy disk drives Printer
1.5±0.1Hold ± 4-0.5 4-0.15 4.0 MIN.
*2.54
*3.2
NOTE
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Burr's dimension : 0.15MAX 3.( ) : Reference dimensions 4. The dimensions indicated by * refer to those measured from the lead base @TA =25 ¢J Symbol IF VR Pad V(BR)CEO V(BR)ECO PC PTOT Topr Tstg Tsol Maximum Rating 50 5 75 30 5 75 100 -25¢J to + 85¢J -40¢J to + 100¢J 260oC for 3 seconds Unit mA V mW V V mW mW
Absolute Maximum Ratings
Parameter Continuous Forward Current INPUT Reverse Voltage Power Dissipation Collector-emitter breakdown voltage OUTPUT Emitter-Collector breakdown voltage Collector power dissipation Total power dissipation Operating Temperature Range Storage Temperature Range Soldering temperature
Unity Opto Technology Co., Ltd.
01/30/2002
MIT-4A11B
Optical-Electrical Characteristics
@TA =25¢J symbol VF IR Iceo Output Collector Emitter Saturation Voltage VCE(SAT) Collector Current Ic (on) tr Transfer Cha...