Silicon MOS IC
Intelligent Power Devices (IPDs)
MIP803, MIP804
Silicon MOS IC
s Features
q Allowing downsizing of the sets through the...
Description
Intelligent Power Devices (IPDs)
MIP803, MIP804
Silicon MOS IC
s Features
q Allowing downsizing of the sets through the reduction of a parts count resulting from the voltage step-up utilizing a coil instead of a transformer and employing the thin surface mounting package. q Allowing low voltage drive (adaptable to a small and low-voltage battery), or VCC = 3V or 1.5V drive q Allowing to adjust the EL light brightness responding to changes in oscillation frequency which can be changed by the external resistor. q EL drive
0.625±0.1 10–0.25±0.1
unit: mm
1
10
3.0±0.2 2 to 12˚
s Applications s Recommended Set
q Watches, pagers, portable CD players, cellular phones, MD players, display panels of remote controllers, and etc.
8–0.5±0.07
5
6
6.3±0.2 4.3±0.2
2 to 12˚
1.4±0.2
0 to 0.2
2 to 6˚
2 to 6˚
s Absolute Maximum Ratings (Ta = 25°C)
Parameter Power supply voltage Input voltage (ENB) Output voltage (CIL) Output voltage (ELD) Output current (CIL) Output current (ELD) Allowable power dissipation Operating ambient temperature Channel temperature Storage temperature Symbol VCC VENB VCIL VELD ICIL IELD PD Topr Tch Tstg Ratings − 0.5 to 4 − 0.5 to VCC + 0.5 − 0.5 to 220 − 0.5 to 220 60 120 150 −20 to +70 −20 to +125 −55 to +125 Unit V V V V mA mA mW °C °C °C
1: GND 6: VCP 2: GND 7: VCC 3: CIL 8: ENB 4: GND 9: RT1 5: ELD 10: RT2 SSONF-10D Package
s Block Diagram
EL
3 VCC + Step-up circuit
CIL
5
ELD
7 TR1 TR2 4 GND
VCP
6
2
GND
Logic circuit 1 GND
8 ENB
Oscillat...
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