Silicon MOS IC
Intelligent Power Devices (IPDs)
MIP508
Silicon MOS IC
s Features
q 3-pin intelligent power device q Five protective fu...
Description
Intelligent Power Devices (IPDs)
MIP508
Silicon MOS IC
s Features
q 3-pin intelligent power device q Five protective functions (over-current, over-voltage, short circuit load, over heat, ESD) are integrated q Acceptable both AC and DC power supply
2.6±0.1
unit: mm
4.5±0.1 1.6±0.2 1.5±0.1
s Applications
q For lamp and solenoid drive
0.4max.
45˚
s Absolute Maximum Ratings (Ta = 25°C)
Parameter Output voltage Output peak current Output current Input voltage Input current Drain clamp energy Allowable power dissipation Channel temperature Storage temperature
*1 *2
1.0–0.2
+0.1
Symbol VDS IOP TC = 25°C TC = 85°C IO VIN IIN ECLP TC = 25°C Ta = 25°C Ta = 85°C Tch Tstg PD
Ratings 40 ±3 1 1 − 0.5 to 6 ±5 24 *1 2 1 *2 0.52*2 −40 to +150 −55 to +150
Unit V A
0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 3 2 1
4.0–0.20
0.4±0.04
A V mA mJ
1: IN 2: Drain 3: Source EIAJ: SC-62 Mini-Power Type Package (3-pin)
marking
W
°C °C
L = 10mH, VDD = 20V, IL = 2.19A, TC = 25°C, 1pulse Mounting on the PCB (the copper foil of the drain portion should have a area of 100mm2 or more and the board thickness should be 1.7mm.)
s Block Diagram
D
Short circuit load protection
Over voltage protection
IN ESD protection
Gate cut-off circuit Over heat protection Over current protection
S
2.5±0.1
+0.25
1
Intelligent Power Devices (IPDs)
s Electrical Characteristics (TC = 25 ± 3°C)
Parameter Drain to Source ON-resistance Drain to Source ON-voltage Drain clamp voltage Drain OFF current (1) Drain OFF c...
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