MIP502

Intelligent Power Devices (IPDs) MIP501, MIP502 MIP501 , MIP502 Silicon MOS IC s Features q MIP501 3.8±0.2 10.8±0.2 7.5±0.2 4.5±0.2 Unit : mm High breakdown voltage, N-Ch MOS FET output (V DSS > 40V Ron < 0.5 Ω) Over-current-protection function built-in Reset function built-in 16.0±1.0 90° 0.65±0.1 0.85±0.1 q q q 2.5±0.1 1.0±0.1 0.65±0.1 0.7±0.1 0.8C 0.8C Direct drive possible by the logic circuit s Applications q Lamp drive 2.5±0.2 0.8C 0.5±0.1 2.5±0.2 0.4±0.1 2.05±0.2 s Absolute Maximum Ratings (Ta= 25˚C) Parameter Output breakdown voltage Output peak current Output current Input voltage Input current Allowable power dissipation Junction temperature Storage temperature Operating temperature MIP501 MIP502 Symbol VDSS IOP IOA VIN IIN PD Tj Tstg Topr Rating 40 5 1.7 – 0.5 to 6 ±10 1.5 1* 150 – 55 to +150 – 40 to + 85 Unit V A V mA W ˚C ˚C ˚C A 1 2 3 1 : IN 2 : Drain 3 : Source MT3 Type Package 4.0±0.2 MIP502 5.0±0.2 Unit : mm 0.45 -0.1 1.27 1.27 +0.15 13.5±0.5 0.7±0.1 0.7±0.2 8.0±0.2 0.45 -0.1 +0.15 * The value at mounted on PCB (glass epoxy resin: 100 ×100mm). (For MIP502 only) 1 2 3 2.54±0.15 2.3±0.2 1 : Source 2 : Drain 3 : IN TO-92NL Type Package s Block Diagram 2 DRAIN Over voltage protection circuit 3 IN Reset circuit Over current protection circuit 1 SOURCE Intelligent Power Devices (IPDs) MIP501, MIP502 s Pin Descriptions No.1 pin : GND pin. Connect to the GND pin. (Source) No.2 pin : Output pin. Connect to the load. The curr...