MIP0210SP

Intelligent Power Devices (IPDs) MIP0210SP Silicon MOS IC s Features q Single chip IC with high breakdown voltage power MOS FET and CMOS control circuits q Allowing to input worldwide mains (AC 85 to 274V) q A pulse-by-pulse overcurrent protection circuit and a timer autorestart circuit are integrated. unit: mm 0.5±0.1 1 2 3 8 1.2±0.25 7 6 5 6.3±0.2 9.4±0.3 s Applications q Switching power supply (to 7W) q AC adaptor q Battery charger 4 2.54±0.25 0.6 –0.1 +0.25 3.8±0.25 4.0±0.3 7.62±0.25 s Absolute Maximum Ratings (Ta = 25 ± 3°C) Parameter Drain voltage Control voltage Output current Control current Channel temperature Storage temperature Symbol VD VC ID IC Tch Tstg Ratings 700 8 1.25 0.1 150 −55 to +150 Unit V V A mA °C °C 3 to 15 1: Source 2: Source +0.1 3: Source .05 0.25 –0 4: Control 5: Drain 6: Source 7: Source 8: Source DIL-8P Type Package s Block Diagram Auto-restart Control pin Shunt regulator + 5.7V 4.7V Shutdown/Auto-restart Power supply for internal circuit 1/2 1/2 Auto-restart current-source 1/2 Drain pin + - Ron X ID Timer auto-restart circuit + Power MOS FET Q PWM control current Thermal shutdown circuit S Restarting trigger circuit R Q Max Duty Clock Sawtooth + S R Q Q Leading edge blanking RE Low pass filter Minimum ON-time delay circuit Source pin 1 Intelligent Power Devices (IPDs) s Electrical Characteristics (TC = 25 ± 2°C) Parameter Output frequency Control functions Maximum duty cycle Minimum duty cycle Control pin charging ...