GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
Description
GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
Description
The MIE-824L3 is an infrared emitting diode utilizing GaAs with AlGaAs window coation chip technology. It is molded in water clear plastic package.
φ5.00 (.197)
MIE-824L3
Unit: inches
Package Dimensions
4.30 (.169)
5.80 (.228)
SEE NOTE 2
1.00 (.039)
FLAT DENOTES CATHODE
Features
l l ...
