MIE-554L3

GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description The MIE-554L3 is an infrared emitting diode in GaAlAs on GaAlAs technology molded in water clear plastic package. φ5.05 (.200) MIE-554L3 Package Dimensions Unit: mm (inches) 5.47 (.215) 7.62 (.300) 5.90 (.230 1.00 (.040) SEE NOTE 2 FLAT DENOTES CATHODE 0.50 TYP. (.020) 23.40 MIN (.920) Features l l Suitable for DC and high pulse current operation Standard T-1 3/4 ( 5mm) package Peak wavelength λP =880 nm Good spectral matching to Si-Photodetecto Radiant angle : 50° Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3. Lead spacing is measured where the leads emerge from the package. A 1.00MIN. (.040) 2.54NOM. (.100) SEE NOTE 3 l l l C Absolute Maximum Ratings '@ TA=25oC Parameter Power Dissipation Peak Forward Current(300pps,10µs pulse) Continuos Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating 120 1 100 5 -55 C to +100 C -55 C to +100 C 260 C for 5 seconds o o o o o Unit mW A mA V Unity Opto Technology Co., Ltd. 11/17/2000 MIE-554L3 Optical-Electrical Characteristics @ TA=25 C Parameter Radiant Intensity Forward Voltage Reverse Current Peak Wavelength Spectral Bandwidth View Angle Relative Radiant Intensity o Test Conditions IF=20mA IF=50mA VR=5V IF=20mA IF=20mA IF=20mA Symbol Ie VF IR λ ∆λ 2 θ1/2 Min. Typ . 1.6 1.4 880 80 50 60 50 40 30 20 10 0 Max. 1...