MIE-534L3

GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE Description The MIE-534L3 is an infrared emitting diode in GaAlAs on GaAlAs technology molded in water clear plastic package . 7.62 (.300) MIE-534L3 Package Dimensions φ5.05 (.200) Unite: mm ( inches ) 5.47 (.215) 5.90 (.230) Features l 1.00 (.040) SEE NOTE 2 FLAT DENOTES CATHODE Suitable for DC and high pulse current operation Standard T-1 3/4 ( φ 5mm ) package Peak wavelength λp = 880 nm Good spectral matching to si-photodetector Radiation angle : 30° 2.54NOM. (.100) SEE NOTE 3 1.00MIN. (.040) 0.50 TYP. (.020) 23.40 MIN (.920) l l l l A C NOTES : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings '@ TA=25oC Parameter Power Dissipation Peak Forward Current(300pps,10µs pulse) Continuos Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating 120 1 100 5 -55 C to +100 C -55oC to +100oC 260oC for 5 seconds o o Unit mW A mA V Unity Opto Technology Co., Ltd. 11/20/2000 MIE-534L3 Optical-Electrical Characteristics @ TA=25oC Parameter Radiant Intensity Forward Voltage Reverse Current Peak Wavelength Spectral Bandwidth Half View Angle Relative Radiant Intensity 1 Test Conditions IF=20mA IF=50mA VR=5V IF=20mA IF=20mA IF=20mA Symbol Ie VF IR λp ∆λ 2θ1/2 Min. Typ. 2.8 1.4 880 80 30 Forward Curr...