GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
Description
The MIE-524H4 is a GaAlAs infrared LED having a pe...
Description
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
Description
The MIE-524H4 is a GaAlAs infrared LED having a peak wavelength at 850 nm . It feature ultra-high power, high response speed and molded in water clear plastic package, the MIE-524H4 have greatly improved long-distance characteristics as well as as significantly increased its range of applicability.
1.00 (.040) SEE NOTE 2 7.62 (.300) φ5.05 (.200)
MIE-524H4
Unit: mm (inches)
Package Dimensions
5.47 (.215)
5.90 (.230)
Features
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FLAT DENOTES CATHODE
Ultra-High radiant incidence Ultra-high speed response High modulation bandwidth Standard T-1 3/4 ( φ 5mm ) package Radiation angle : 20° Peak wavelength λp = 850 nm
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1.00MIN. (.040) 2.54NOM. (.100) SEE NOTE 3 0.50 TYP. (.020) 23.40 MIN (.920)
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Applications
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Free air transmission systems with high -speed response
NOTES : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3. Lead spacing is measured where the leads emerge from the package.
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SIR
Absolute Maximum Ratings '@ TA=25oC
Parameter Power Dissipation Peak Forward Current(300pps,10µs pulse) Continuos Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating 120 1 100 5 -55 C to +100 C -55 C to +100 C 260oC for 5 seconds
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Unit mW A mA V
Unity Opto Technology Co., Ltd.
11/17/2000
MIE-524H4
Optical-Electrical Characteristics @ TA=25oC
Param...
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